npn silicon planar avalanche transistor provisional datasheet issue 2 ? march 94 features * avalanche mode operation * 50a peak avalanche current * low inductance packaging applications * laser led drivers * fast edge generation * high speed pulse generators absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6v continuous collector current i c 200 ma peak collector current (25ns pulse width) i cm 50 a power dissipation p tot 500 mw operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-emitter breakdown voltage v (br)ces 150 v i c =100 m a collector-emitter breakdown voltage v ceo(sus) 50 v i c =10ma emitter-base breakdown voltage v (br)ebo 6v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =120v emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.15 v i c =10ma, i b =1ma base-emitter saturation voltage v be(sat) 0.8 v i c =10ma, i b =1ma current in second breakdown (pulsed) i usb 22 31 a a vc=110v, c ce =4.7nf* v c =130v, c ce =4.7nf* static forward current transfer ratio h fe 50 i c =10ma, v ce =10v *measured within a circuit possessing an approximate loop inductance of 12nh. the i (usb) monitor circuitry reflects 0.15 ohm into the collector-emitter discharge loop e-line to92 compatible ZTX413 3-169 c b e typical characteristics p d - power dissipation (watts) 0.2 0.4 0.6 0.8 t - temperature (c) 0 -60 -20 20 60 100 140 180 0 derating curve 20 10 0 40 50 30 avalanche current v supply voltage v s - supply voltage (v) i ( us b) - a valanche current (a) c ce =2x4.7nf 050 100 150 200 250 c ce =4.7nf c ce =2.2nf c ce =1.0nf t amb =25c i b =5ma/ns p.r.f.=10khz ZTX413 electrical characteristics parameter symbol min. typ. max. unit conditions. emitter inductance l e 6 nh with 3mm leads transition frequency f t 150 mhz i c =10ma, v ce =5v f=20mhz collector-base capacitance c cb 2p fv cb =10v, i e =0 f=1mhz . 3-170 not recommended for new design please use ztx415
npn silicon planar avalanche transistor provisional datasheet issue 2 ? march 94 features * avalanche mode operation * 50a peak avalanche current * low inductance packaging applications * laser led drivers * fast edge generation * high speed pulse generators absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6v continuous collector current i c 200 ma peak collector current (25ns pulse width) i cm 50 a power dissipation p tot 500 mw operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-emitter breakdown voltage v (br)ces 150 v i c =100 m a collector-emitter breakdown voltage v ceo(sus) 50 v i c =10ma emitter-base breakdown voltage v (br)ebo 6v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =120v emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.15 v i c =10ma, i b =1ma base-emitter saturation voltage v be(sat) 0.8 v i c =10ma, i b =1ma current in second breakdown (pulsed) i usb 22 31 a a vc=110v, c ce =4.7nf* v c =130v, c ce =4.7nf* static forward current transfer ratio h fe 50 i c =10ma, v ce =10v *measured within a circuit possessing an approximate loop inductance of 12nh. the i (usb) monitor circuitry reflects 0.15 ohm into the collector-emitter discharge loop e-line to92 compatible ZTX413 3-169 c b e typical characteristics p d - power dissipation (watts) 0.2 0.4 0.6 0.8 t - temperature (c) 0 -60 -20 20 60 100 140 180 0 derating curve 20 10 0 40 50 30 avalanche current v supply voltage v s - supply voltage (v) i ( us b) - a valanche current (a) c ce =2x4.7nf 050 100 150 200 250 c ce =4.7nf c ce =2.2nf c ce =1.0nf t amb =25c i b =5ma/ns p.r.f.=10khz ZTX413 electrical characteristics parameter symbol min. typ. max. unit conditions. emitter inductance l e 6 nh with 3mm leads transition frequency f t 150 mhz i c =10ma, v ce =5v f=20mhz collector-base capacitance c cb 2p fv cb =10v, i e =0 f=1mhz . 3-170 not recommended for new design please use ztx415
|
